High Resolution Transmission Electron Microscopy
High Resolution Transmisson Electron Microscopy (HRTEM) at the National Institute of Material Physics in Bucharest
Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through an ultra-thin specimen, interacting with the specimen as it passes through it. An image is formed from the interaction of the electrons transmitted through the specimen; the image is magnified and focused onto an imaging device, such as a fluorescent screen, onto a layer of photographic film or detected by a sensor such as a CCD camera. TEMs are capable of imaging at a significantly higher resolution than light microscopes, owing to the small de Broglie wavelength of electrons. This enables the instrument’s user to examine fine detail, even as small as a single column of atoms, which is thousands of times smaller than the smallest resolvable object in a light microscope. TEM is a major analysis method in a range of scientific fields, in both physical and biological sciences. TEM finds application in materials science ranging from nanotechnology and nanomaterials to metallic alloys, ceramics and semiconductor research, as well as in live sciences, such as virology, cellular biology or cancer research.
The JEOL JEM ARM 200F microscope is suitable for microstructural and morphological characterization of nanostructured materials (powders, nanowires), thin films, ceramics and alloys. Furthermore, it is specialized for structural characterization down to atomic resolution of extended defects in crystalline materials and the characterization of strain fields associated with extended defects and interfaces. The use of Energy-Dispersive X-ray Spectroscopy (EDS) and Electron Energy Loss Spectroscopy (EELS) allows the determination of a material’s elemental composition.
Contact: Corneliu Ghica
Tel: +40 21 369 01 85 108
Technical specifications JEOL JEM ARM 200F
- CTEM, HRTEM, STEM BF, STEM ADF, STEM HAADF, SAED, nano-ED, CBED, EDS, EELS, EFTEM, EELS-SI.
- Accelerating voltages: 120, 200 kV
- TEM magnification: 50 – 2 000 000 ×
- TEM resolution: 0.19 nm
- STEM magnification: 200 – 150 000 000 ×
- STEM-HAADF resolution: 0.08 nm
- EDS energy resolution: 131,4 eV (Mn-Ka)
- EDS in STEM mode: spot, line profile or 2D mapping possible
- EELS – energy resolution 0.7 eV
Detailed information can be found on the Instrument’s Webpage.